Enhancing optoelectronic properties of mediator-assisted wafer-scale MoS2 and WS2 on h-BN

Sheng-Kuei Chiu¹, Ming-Chi Li², Ji-Wei Ci², Yuan-Chih Hung², Dung-Sheng Tsai², Chien-Han Chen², Kenji Watanabe⁴, Takashi Taniguchi⁴, Nobuyuki Aoki⁵, Ya-Ping Hsieh⁶, Chiashain Chuang^2*

¹Department of Materials Science and Engineering, Feng Chia University, Taichung, Taiwan
²Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan, Taiwan
³Department of Electrophysics, National Chiayi University, Chiayi, Taiwan
⁴Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
⁵Department of Materials Science, Chiba University, Chiba, Japan
⁶Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Japan

* Presenter:Chiashain Chuang, email:chiashain@cycu.edu.tw

The two-dimensional material heterostructures reveal interesting optoelectronic properties. Therefore, they are excellent platforms for exploring fundamental research and real device applications. In this talk, I would present a wet transfer existing method to separate mediator-assisted wafer-scale from SiO2/Si growing wafer with annealing to produce wafer-scale MoS2/h-BN and WS2/h-BN heterostructures on a SiO2/Si wafer. Interestingly, the 2D material heterostructure optical properties were increased and confirmed by Raman and photoluminescence spectroscopy. Our result could be applied to other 2D materials and mass production for industrial applications.

Keywords: WS2, MoS2, h-BN, heterostructure