Advancing 2D Materials for Future Electronics: Selective Synthesis, Transferring Processes, and Device Integration

Ching Yuan Su^1,2*

¹Graduate Institute of Energy Engineering, National Central University, Taoyuan, Taiwan
²Optical Sciences Research Center, National Central University, Taoyuan, Taiwan

* Presenter:Ching Yuan Su, email:cysu@ncu.edu.tw

Two-dimensional (2D) materials like graphene and transition metal dichalcogenides (TMDs) have attracted significant attention due to their exceptional electrical properties, holding promise for next-generation nanoelectronics. However, integrating 2D materials into IC devices presents challenges, including precisely controlled synthesis methods, defect-free transfer processes, and back-end-of-line (BEOL) device integration.
In this talk, I will discuss advancements in selectively seeding growth of high-quality 2D materials on insulating substrates using a new precursor and advanced process. Additionally, an efficient and reliable method for the wafer-scale transfer of graphene and other 2D materials, ensuring integrity and cleanliness, will be presented. Finally, I will highlight the concept of a heterogeneously integrated 3D-IC, combining a 2D-based field-effect transistor (FET) with high-performance memory, showcasing the potential for BEOL and monolithic integration of 2D-based 3D-ICs.

Keywords: 2D materials, Transition metal dichalcogenides (TMDs), Field-effect transistor (FET)