Twisted lateral BiFeO3 homostructures

Chia-Chun Wei^1,7*, Ping-Chun Wu^1,7, Qilan Zhong^2,7, Sheng-Zhu Ho¹, Yi-De Liou¹, Yu-Chen Liu¹, Chun-Chien Chiu¹, Wen-Yen Tzeng³, Kuo-En Chang¹, Yao-Wen Chang¹, Junding Zheng³, Chun-Fu Chang⁴, Chien-Ming Tu³, Tse-Ming Chen¹, Chih-Wei Luo^3,5, Rong Huang², Chun-Gang Duan², Yi-Chun Chen¹, Chang-Yang Kuo^3,5, Jan-Chi Yang^1,6

¹Department of Physics, National Cheng Kung University, Tainan, Taiwan
²Key Laboratory of Polar Materials and Devices(MOE) and Department of Electronics, East China Normal University, Shanghai, China
³Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
⁴Chemical Physics of Solids, Max-Planck Institute, Dresden, Germany
⁵National Synchrotron Radiation Research Center, Hsinchu, Taiwan
⁶Center for Quantum Frontiers of Research & Technology (QFort), National Cheng Kung University, Tainan, Taiwan
⁷These authors contributed equally:Ping-ChunWu,Chia-ChunWei,QilanZhong, Taiwan

* Presenter:Chia-Chun Wei, email:wei40809@gmail.com

In the research of new materials, the combination of different structures induces different boundary conditions, serving as the main foundations for manipulating the properties of different material systems. These conditions make these materials exhibit outstanding properties and potential candidates for applied physics. In this study, we demonstrate a new method to assemble heterostructures in complex oxide, named as weave epitaxy. This new fabrication involves the combination of freestanding technique and the concept of twist stacking. With this weave epitaxy method, we can basically obtain any bicrystal structures and heterostructure in complex oxide system. Thus, We made the bicrystal boundaries with different twist angles in (101)-oriented BiFeO3 (BFO)thin films in this work and discovered the domain structure of BFO exhibits significant size differences in different twist angle boundary. Furthermore, We demonstrate this approach can be a universal way to various complex oxide system such as La0.7Sr0.3MnO3 (LSMO), whose unconventional physical properties can be artificially manipulated. This delicate method can even combine any two different materials without considering the compatibility between them. This weave epitaxy method offers the extra degrees of freedom to the fabrication of oxide thin films. Our results provide an efficient way to fabricate twisted lateral homogeneous structures and offer an extra degree of freedom to design epitaxial films.

Keywords: Complex oxide, Twisted lateral homogeneous structures, Freestanding Technique, Ferroeletrical material , Hetreostructure