Lasing in group-IV GeSn semiconductors on silicon

Guo-En Chang^1,2*

¹Mechanical Engineering/機械工程學系, National Chung Cheng University/國立中正大學, Chiayi County/嘉義縣, Taiwan
²Graduate Institute of Opto-Mechatronics/光機電整合工程研究所, National Chung Cheng University, Chiayi County/嘉義縣, Taiwan

* Presenter:Guo-En Chang, email:imegec@ccu.edu.tw

Traditional group-IV SiGe alloys are indirect-bandgap semiconductors, which are considerable not possible to achieve lasing action. However, a recent breakthrough has been made to create a new class of group-IV semiconductor, GeSn alloys. The introduction of Sn into Ge can effectively tailor the bandgap structure, ultimately leading to the attainment of a direct bandgap when a sufficient Sn content is reached. This breakthrough enables efficient light emission via direct-gap interband transitions to achieve stimulated emission. In this presentation, I will share our recent advancements in the development of optically-pumped GeSn lasers on silicon, covering the material growth, device development, and the underlying laser physics.

Keywords: Group-IV semiconductors, GeSn alloys, Low-temperature epitaxy, Lasers, Silicon Photonics