Controllable Layer-by-Layer Deposition of MoS2 by Magnetron Sputtering
Zih-Siang Jian1,2*, Wei-Chen Tseng1, Jie-Ru Yen1, Hsiang-Huan Lee1, Wen-Hao Chang1,2
1Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
2Research Center for Applied Sciences, Academia Sinica, Taipei, Taiwan
* Presenter:Zih-Siang Jian, email:darke047.sc10@nycu.edu.tw
We demonstrate here a controllable layer-by-layer deposition of MoS2 on a template of monolayer single-crystal MoS2 by magnetron sputtering followed by thermal annealing in H2S environments. By controlling the sputtering time, layer-control of MoS2 has been achieved. Compared with direct sputtering of MoS2 on sapphire, using monolayer MoS2 as the template can significantly improve the uniformity and crystallinity of the sputtered MoS2. The sputtered MoS2 films have been examined by Raman, photoluminescence spectra, X-ray photoelectron spectroscopy and X-ray diffraction. The layer numbers have been identified by atomic force microscopy combined with Raman mode separation. The approach for MoS2 layer-by-layer growth is scalable and applicable to selected-area layer engineering.


Keywords: Monolayer molybdenum disulfide, TMDs, 2D Semiconductor, Magnetron Sputtering, LPCVD