Fabrication of Bi2O2S Epitaxial Thin Films and Their Novel Optical Properties

Chuan Chuang^1*, Ying-Hao Chu(朱英豪)¹

* Presenter:Chuan Chuang, email:v89550526@gmail.com

Two-dimensional (2D) bismuth oxychalcogenide (Bi2O2X, X refers to S, Se, and Te) is one type of rising semiconductor due to its remarkable electronic, optoelectronic, excellent electrical transport properties, high photoresponse, and good air stability. This study shows that the band gap of Bi2O2S (Eg=1.12 eV) falls in the region for absorbing most solar light. The epitaxial Bi2O2S thin film has been confirmed by x-ray diffraction through a phi scan, rocking curve, RSM, XPS, and TEM. The optical properties were confirmed by PL, UPS, and LEIPS. In this study, the epitaxy Bi2O2S thin film has been fabricated to explore optical properties. Additionally, the previously reported Bi2O2S materials are powders, which is disbenefit to the performance of the photodetector because there are issues in the photodetector-constructing process, including easy aggregation, complex processes, and poor substrate bonding. Therefore, obtaining Bi2O2S thin film for high-performance IR photodetector has great significance. Bi2O2S epitaxial thin film is believed to have excellent photoelectric properties.

Keywords: Bi2O2S , Optoelectronics, Epitaxial, Photodetector