Synthesis and Analysis of Multilayer Gallium Telluride Sulfide for Light Emission and Water Environment Applications

Luthviyah CHoirotul Muhimmah^1*, Ching-Hwa Ho¹

¹Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei, Taiwan

* Presenter:Luthviyah CHoirotul Muhimmah, email:luthviyahc@gmail.com

Gallium monochalcogenides have garnered significant scientific attention among 2D semiconductors owing to their unique optical and electrical characteristics and high suitability for a wide range of applications in optoelectronics devices. This study focused on the examination of the crystal structures and optical properties of a full series of multilayer gallium telluride sulfide (GaTe1-xSx, where x=0-1). The experimental result reveals that the monoclinic (M) phase is predominant at GaTe1−xSx (0≤x≤0.4) and the hexagonal (H) phase predominates at GaTe1−xSx (0.425≤x≤1). The photoluminescence of the multilayer GaTe1−xSx (0≤x<1) demonstrates a significant shift from the near-infrared to the blue light region with an increase in sulfur concentration. The M-GaTe1−xSx (0≤x≤0.4) series has a band gap ranging from 1.65 to 1.77 eV (700–750 nm), whereas the H-GaTe1−xSx (0≤x≤1) series displays a band gap spanning from 1.588 to 2.5 eV (496–780 nm). Multilayer GaTe1−xSx (0≤x≤1) exhibits enhanced light-emission and photodetection properties, rendering it a promising candidate for incorporation into forthcoming optoelectronic devices. The GaTe1−xSx nano-sheet photocatalysis were employed for the purpose of degrading methylene-blue dye contaminants in water, specifically under visible-light conditions. The photocatalytic performance of the GaTe0.5S0.5 layered photocatalyst is superior, primarily attributed to the significant presence of surface and mixed-phase effects, which effectively boost the rate of photodegradation.

Keywords: 2D semiconductors, Optoelectronics, Photoluminescence, Photodegradation